KDB2532 Selling Leads, Price trend, KDB2532 DataSheet download, circuit diagram from SeekIC.com

Features: ·rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A·Qg(tot) = 82nC (Typ.), VGS = 10V·Low Miller Charge·Low QRR Body Diode·UIS Capability (Single Pulse and Repetitive Pulse)Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ...

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SeekIC No. : 004384959 Detail

KDB2532: Features: ·rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A·Qg(tot) = 82nC (Typ.), VGS = 10V·Low Miller Charge·Low QRR Body Diode·UIS Capability (Single Pulse and Repetitive Pulse)Specifications Param...

KDB2532 Data Sheet

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Part Number:: KDB2532
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/24

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Recent History
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KDB2552 evaluate
Features: `rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A`Qg(tot) = 39nC (Typ.), VGS = 10V`Low Miller C...
KDB2570 evaluate
Features: 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 VLow gate chargeFast s...
KDB2572 evaluate
Features: ·rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A·Qg(tot) = 26nC (Typ.), VGS = 10V·Low Miller Ch...

Product Details

Description

Features:

·rDS(ON) = 14m (Typ.), V_GS = 10V, I_D = 33A
·Qg(tot) = 82nC (Typ.), V_GS = 10V
·Low Miller Charge
·Low QRR Body Diode
·UIS Capability (Single Pulse and Repetitive Pulse)

Specifications

Parameter	Symbol	Rating	Unit
Drain to source voltage	V_DSS	150	V
Gate to source voltage	V_GSS	±20	V
Drain current-Continuous T_C=25 T_A=25	I_D	79	A
Drain current-Continuous T_C=25 T_A=25	I_D	8	A
Power dissipation Derate above 25	P_D	310 2.07	W/
Thermal Resistance Junction to Ambient	R_JA	43	/W
Channel Temperature	T_ch	175
Storage Temperature	T_stg	-55 to +175

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KDB2532

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