Features: `rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A`Qg(tot) = 39nC (Typ.), VGS = 10V`Low Miller Charge`Low QRR Body Diode`UIS Capability (Single Pulse and Repetitive Pulse)Specifications Parameter Symbol P-channel Unit Drain-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VG...
KDB2552: Features: `rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A`Qg(tot) = 39nC (Typ.), VGS = 10V`Low Miller Charge`Low QRR Body Diode`UIS Capability (Single Pulse and Repetitive Pulse)Specifications Param...
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Parameter | Symbol | P-channel | Unit |
Drain-to-Source Voltage | VDSS | 150 | V |
Gate-to-Source Voltage | VGSS | ±20 | V |
Drain current-Continuous TC=25 TA=25 |
ID | 37 | A |
5 | |||
Power dissipation Derate above 25 |
PD | 150 1.0 |
W W/ |
Thermal Resistance Junction to Ambient | RJA | 43 | /W |
Channel Temperature | Tch | 175 | |
Storage Temperature | Tstg | -55 to +150 |