Features: 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 VLow gate chargeFast switching speedHigh performance trench technology for extremely low RDS(ON)Specifications Parameter Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source vo...
KDB2570: Features: 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 VLow gate chargeFast switching speedHigh performance trench technology for extremely low RDS(ON)Specifications Parame...
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Parameter |
Symbol |
Ratings |
Unit | |
Drain to source voltage |
VDSS |
150 |
V | |
Gate to source voltage |
VGSS |
±20 |
V | |
Drain current TC=25 |
ID |
22 |
A | |
Drain current-pulsed |
Idp |
50 |
A | |
Power dissipation Derate above 25 |
PD |
93 0.63 |
W W/ | |
Thermal Resistance Junction to Ambient |
RJA |
62.5 |
/W | |
Thermal Resistance, Junction-to-Case |
RJC |
1.6 |
/W | |
Channel Temperature |
Tch |
175 |
||
Storage Temperature |
Tstg |
-55 to +150 |