IXUC 60N10

Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation· Trench MOSFET- very low RDS(on)- fast switching- usable intrinsic reverse diode· Low drain to tab capacitance(<15pF)· Unclamped Inductive Switching (UIS) rate...

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IXUC 60N10 Picture
SeekIC No. : 004381699 Detail

IXUC 60N10: Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation· Trench MOSFET- very low RDS(on)- fast switching- usable intri...

floor Price/Ceiling Price

Part Number:
IXUC 60N10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
· Trench MOSFET
- very low RDS(on)
- fast switching
- usable intrinsic reverse diode
· Low drain to tab capacitance(<15pF)
· Unclamped Inductive Switching (UIS) rated



Application

· Automotive 42V systems
- electronic switches to replace relays and fuses
- choppers to replace series dropping resistors used for motors, heaters, etc.
- inverters for AC drives, e.g. starter
generator
- DC-DC converters, e.g. 12V to 42V, etc.
· Power supplies
- DC - DC converters
- Solar inverters
· Battery powered systems
- choppers or inverters for motor control in hand tools
- battery chargers




Specifications

Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 100 V
VGS Continuous ±20 V
ID25
ID90
TC = 25°C; Note 1
TC = 90°C, Note 1
60
45
A
A
IS25
IS90
TC = 25°C; Note 1, 2
TC = 90°C, Note 1, 2
60
45
A
A
ID(RMS) Package lead current limit 45 A
EAS TC = 25°C tlb mJ
PD TC = 25°C 150  
TJ
TJM
Tstg
  -55 ... +175
             175
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~
FC Mounting force 11 ... 65 / 2.4 ...11 N/lb
Weight   2 g



Description

 


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