MOSFET 160 Amps 75V 5.1 Rds
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Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mountin...
Features: ·Silicon chip on Direct-Copper-Bond substrate- High power dissipation - Isolated mountin...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 160 A | ||
Resistance Drain-Source RDS (on) : | 0.0065 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | ISOPLUS 220 | Packaging : | Tube |
·Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
·Trench MOSFET
- very low RDS(on)
- fast switching
- usable intrinsic reverse diode
·Low drain to tab capacitance(<15pF)
· Unclamped Inductive Switching (UIS)
rated
VDSS |
TJ = 25°C to 150°C |
75 |
V |
VGS |
Continuous |
±20 |
V |
ID25 ID90 |
TC = 25°C; Note 1 TC = 90°C, Note 1 |
160 130 |
A A |
IS25 IS90 |
TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 |
160 120 |
A A |
ID(RMS) |
Package lead current limit |
45 |
A |
EAS |
TC = 25°C |
tbd |
mJ |
PD |
TC = 25°C |
300 |
W |
TJ TJM Tstg |
|
-55 ... +175 175 -55 ... +150 |
°C °C °C |
TL |
1.6 mm (0.062 in.) from case for 10 s |
300 |
°C |
VISOL |
RMS leads-to-tab, 50/60 Hz, t = 1 minute |
2500 |
V~ |
FC |
Mounting force |
11 ... 65 / 2.4 ...11 |
N/lb |
Technical/Catalog Information | IXUC160N075 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 160A |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 100A, 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 250nC @ 10V |
Package / Case | ISOPLUS220? |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXUC160N075 IXUC160N075 |