MOSFET 200 Amps 55V 4 Rds
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Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mountin...
Features: ·Silicon chip on Direct-Copper-Bond substrate- High power dissipation - Isolated mountin...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 200 A | ||
Resistance Drain-Source RDS (on) : | 0.0051 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | ISOPLUS 220 | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VDSS | TJ = 25°C to 150°C | 55 | V |
VGS | Continuous | ±20 | V |
ID25 ID90 |
TC = 25°C; Note 1 TC = 90°C, Note 1 |
200 160 |
A A |
ID25 ID90 |
TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 |
200 140 |
A A |
ID(RMS) | Package lead current limit | 45 | A |
EAS | TC = 25°C | 500 | mJ |
PD | TC = 25°C | 300 | W |
TJ TJM Tstg |
-55 ... +175 175 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
VISOL | RMS leads-to-tab, 50/60 Hz, t = 1 minute | 2500 | V~ |
FC | Mounting force | 11 ... 65 / 2.4 ...11 | N/lb |
Weight | 2 | g |
Technical/Catalog Information | IXUC200N055 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 200A |
Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 100A, 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 200nC @ 10V |
Package / Case | ISOPLUS220? |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXUC200N055 IXUC200N055 |