MOSFET 100 Amps 55V 6.1 Rds
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Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mountin...
Features: ·Silicon chip on Direct-Copper-Bond substrate- High power dissipation - Isolated mountin...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A | ||
Resistance Drain-Source RDS (on) : | 0.0077 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | ISOPLUS 220 | Packaging : | Tube |
Technical/Catalog Information | IXUC100N055 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 7.7 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 150W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 100nC @ 10V |
Package / Case | ISOPLUS220? |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXUC100N055 IXUC100N055 |