Features: ·Silicon chip on Direct-Copper-Bond substrate- High power dissipation - Isolated mounting surface - 2500V electrical isolation·Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode·Low drain to tab capacitance(<15pF)·Unclamped Inductive Switching (UIS) rat...
IXUC120N10: Features: ·Silicon chip on Direct-Copper-Bond substrate- High power dissipation - Isolated mounting surface - 2500V electrical isolation·Trench MOSFET - very low RDS(on) - fast switching - usable in...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mountin...
VDSS |
TJ = 25°C to 150°C |
100 |
V |
VGS |
Continuous |
±20 |
V |
ID25 ID90 |
TC = 25°C; Note 1 TC = 90°C, Note 1 |
120 90 |
A A |
IS25 IS90 |
TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 |
120 90 |
A A |
ID(RMS) |
Package lead current limit |
45 |
A |
EAS |
TC = 25°C |
tbd |
mJ |
PD |
TC = 25°C |
300 |
W |
TJ TJM Tstg |
-55 ... +175 175 -55 ... +150 |
°C °C °C | |
TL |
1.6 mm (0.062 in.) from case for 10 s |
300 |
°C |
VISOL |
RMS leads-to-tab, 50/60 Hz, t = 1 minute |
2500 |
V~ |
FC |
Mounting force |
11 ... 65 / 2.4 ...11 |
N/lb |