Features: ·International standard packages· Fast recovery diode·Unclamped Inductive Switching (UIS) rated·Low package inductance- easy to drive and to protectSpecifications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 M 600...
IXFX 48N60P: Features: ·International standard packages· Fast recovery diode·Unclamped Inductive Switching (UIS) rated·Low package inductance- easy to drive and to protectSpecifications Symbol Test Conditi...
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Features: SpecificationsDescription IXFX 100N25 is a type of HiPerFET power MOSFETs which has six ...
Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Symbol | Test Conditions | Maximum Ratings | |
VDSS | TJ = 25°C to 150°C | 600 | V |
VDGR | TJ = 25°C to 150°C; RGS = 1 M | 600 | V |
VGS | Continuous | ±30 | V |
VGSM | Tranisent | ±40 | V |
ID25 | TC = 25°C | 48 | A |
IDM | TC = 25°C, pulse width limited by TJM | 110 | A |
IAR | TC = 25°C | 48 | |
EAR | TC = 25°C | 70 | mJ |
EAS | TC = 25°C | 2.0 | J |
dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS, | 20 | V/ns |
TJ 150°C, RG = 5 | |||
PD | TC = 25°C | 830 | |
TJ | -55 ... +150 | °C | |
TJM | 150 | °C | |
Tstg | -55 ... +150 | °C | |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
TSOLD | Plastic body for 10 s | 260 | °C |
Md | Mounting torque (TO-247) | 1.13/10 | Nm/lb.in. |
Weight | TO-247 | 10 | g |
PLUS220 & PLUS220SMD | 6 | g |