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IXFX100N25

MOSFET 100 Amps 250V 0.027 Rds

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SeekIC No. : 00159102 Detail

IXFX100N25: MOSFET 100 Amps 250V 0.027 Rds

IXFX100N25 Data Sheet

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Part Number:
IXFX100N25
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.027 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 250 V
Package / Case : PLUS 247
Resistance Drain-Source RDS (on) : 0.027 Ohms


Features:

 International standard packages
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS) rated
 Low package inductance
   - easy to drive and to protect
 Fast intrinsic rectifier


Application

 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 AC motor control
 Temperature and lighting controls


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS= 1 M
250
250
V
V
VGS
VGSM		 Continuous
Transient
±20
±30
V
V
ID25
ID104
IDM
IAR
TC = 25°C (MOSFET chip capability)
TC = 104°C (External lead capability)
TC = 25°C, pulse width limited by TJM
TC = 25°C
100
75
400
100
A
A
A
A

EAR
EAS
TC = 25°C
TC = 25°C
64
3

mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
5
V/ns
PD TC = 25°C
560
W

TJ
TJM
Tstg
-55 ... +150
             150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s
300

°C

Md
Mounting torque TO-264
0.9/6
Nm/lb.in.
Weight
PLUS 247
TO-264
6
10
g
g



Parameters:

Technical/Catalog InformationIXFX100N25
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs27 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9100pF @ 25V
Power - Max560W
PackagingTube
Gate Charge (Qg) @ Vgs300nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFX100N25
IXFX100N25



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