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IXFX 120N25

Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive and to protect· Fast intrinsic rectifierApplication· DC-DC converters· Battery chargers· Switched-mod...

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IXFX 120N25: Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive a...

IXFX 120N25 Data Sheet

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Part Number:
IXFX 120N25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
  - easy to drive and to protect
· Fast intrinsic rectifier


Application

· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· AC motor control
· Temperature and lighting controls


Specifications

Symbol Test Conditions
Maximum
Ratings
VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150 ; RGS = 1 M
250
250
V
V
VGS
VGSM		 Continuous
Transient
±20
±30
V
V
ID25
ID104
IDM
IAR		 TC = 25°C (MOSFET chip capability)
TC = 104°C (External lead capability)
TC = 25°C, pulse width limited by TJM
TC = 25
120
75
480
90
A
A
A
A
EAR TC = 25
64
mJ
EAS TC = 25
3
J
dv/dt IS IDM, di/dt100 A/s, VDDVDSS,
TJ 150 , RG = 2
5
V/ns
PD TC = 25
560
W
TJ
TJM
Tstg		  
-55 ... +150
150
-55 ... +150


TL 1.6 mm (0.063 in.) from case for 10 s
300

Md

 Mounting torque TO-264
0.7/6
Nm/lb.in.
Weight                    PLUS 247
                   TO-264
6
10
g
g



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