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IXFX62N25

MOSFET 62 Amps 250V 0.035 Rds

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SeekIC No. : 00159231 Detail

IXFX62N25: MOSFET 62 Amps 250V 0.035 Rds

IXFX62N25 Data Sheet

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Part Number:
IXFX62N25
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 62 A
Package / Case : PLUS 247
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
   - easy to drive and to protect
• Fast intrinsic rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls


Parameters:

Technical/Catalog InformationIXFX62N25
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs35 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6600pF @ 25V
Power - Max390W
PackagingTube
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFX62N25
IXFX62N25



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