IXFX62N25 Selling Leads, Price trend , Ixys, IXFX62N25 DataSheet download, circuit diagram from SeekIC.com

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IXFX62N25: MOSFET 62 Amps 250V 0.035 Rds

IXFX62N25 Data Sheet

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Part Number:: IXFX62N25
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/11/21

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What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	62 A
Resistance Drain-Source RDS (on) :	0.035 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	PLUS 247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 62 A
Package / Case : PLUS 247
Resistance Drain-Source RDS (on) : 0.035 Ohms

Features:

• International standard packages
• Low R_{DS (on}) HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier

Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls

Parameters:

Technical/Catalog Information	IXFX62N25
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	62A
Rds On (Max) @ Id, Vgs	35 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6600pF @ 25V
Power - Max	390W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	PLUS 247
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFX62N25 IXFX62N25

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IXFX62N25

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