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IXFX38N80Q2

MOSFET 38 Amps 800V 0.22 Rds

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SeekIC No. : 00158420 Detail

IXFX38N80Q2: MOSFET 38 Amps 800V 0.22 Rds

IXFX38N80Q2 Data Sheet

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Part Number:
IXFX38N80Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.22 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.22 Ohms
Continuous Drain Current : 38 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : PLUS 247


Features:

·Double metal process for low gate resistance
·International standard packages
·Epoxy meet UL 94 V-0, flammability
·classification
·Avalanche energy and current rated
·Fast intrinsic Rectifier
·miniBLOC package version with Aluminum Nitrate isolation


Application

·Easy to mount
·Space savings
·High power density


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ		 800
800		 V
V
VGS
VGSM		 Continuous
Transient		 ±30
±40		 V
V
ID25
IDM
IAR		 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C		 38
150 
38		 A
A
A
EAR
EAS		 TC = 25°C
TC= 25°C		 75
4.0		 mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2 Ω		 20 V/ns
PD TC = 25°C 735 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C
VISOL 50/60Hz, RMS t =1 min SOT-227B
IISOL < 1mA t = 1s		 2500
3000		 V~
V~
Md Mounting torque TO-264
Terminal torque SOT-227B		 0.9/8
1.5/13		 Nm/lb.in.
Nm/ib.in.
FC Mounting force PLUS-247 22...130/5...30 N/lb
Weight PLUS 247
TO-264		 10
30		 g
g



Parameters:

Technical/Catalog InformationIXFX38N80Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C38A
Rds On (Max) @ Id, Vgs220 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 8340pF @ 25V
Power - Max735W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFX38N80Q2
IXFX38N80Q2



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