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IXFX34N80

MOSFET 800V 34A

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SeekIC No. : 00164421 Detail

IXFX34N80: MOSFET 800V 34A

IXFX34N80 Data Sheet

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Part Number:
IXFX34N80
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 0.24 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 34 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : PLUS 247
Resistance Drain-Source RDS (on) : 0.24 Ohms


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
  - easy to drive and to protect
• Fast intrinsic rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 800
800		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°Cpulse width limited by TJM
TC = 25°C
 34
136
36

A
A
A


EAR
EAS
 ID = 32 A
TC = 25°C		 64
3
mJ
J
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2 		5 V/ns
PD TC = 25°C 560 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque TO-264
 0.9/6
 Nm/lb.in.
Weight PLUS 247
TO-264		 6
10		 g
g




Parameters:

Technical/Catalog InformationIXFX34N80
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C34A
Rds On (Max) @ Id, Vgs240 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7500pF @ 25V
Power - Max560W
PackagingTube
Gate Charge (Qg) @ Vgs270nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IXFX34N80
IXFX34N80



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