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IXFX30N100Q2

MOSFET 30 Amps 1000V 0.35 Rds

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SeekIC No. : 00158422 Detail

IXFX30N100Q2: MOSFET 30 Amps 1000V 0.35 Rds

IXFX30N100Q2 Data Sheet

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Part Number:
IXFX30N100Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.4 Ohms
Drain-Source Breakdown Voltage : 1000 V
Package / Case : PLUS 247


Features:

·Double metal process for low gate resistance
·International standard packages
·Epoxy meet UL 94 V-0, flammability classification
·Avalanche energy and current rated
·Fast intrinsic Rectifier


Application

􀁺 ·Easy to mount
􀁺 ·Space savings
􀁺 ·High power density


Parameters:

Technical/Catalog InformationIXFX30N100Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs400 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 8200pF @ 25V
Power - Max735W
PackagingTube
Gate Charge (Qg) @ Vgs186nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFX30N100Q2
IXFX30N100Q2



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