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IXFX26N90

MOSFET 26 Amps 900V 0.3 Rds

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SeekIC No. : 00158192 Detail

IXFX26N90: MOSFET 26 Amps 900V 0.3 Rds

IXFX26N90 Data Sheet

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Part Number:
IXFX26N90
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 0.3 Ohms
Package / Case : PLUS 247
Continuous Drain Current : 26 A


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
   - easy to drive and to protect
• Fast intrinsic rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls


Parameters:

Technical/Catalog InformationIXFX26N90
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs300 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 10800pF @ 25V
Power - Max560W
PackagingTube
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFX26N90
IXFX26N90



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