MOSFET 25 Amps 900V 0.33 Rds
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Features: SpecificationsDescription IXFX 100N25 is a type of HiPerFET power MOSFETs which has six ...
Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: ·International standard packages· Fast recovery diode·Unclamped Inductive Switching (UIS...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 25 A | ||
Resistance Drain-Source RDS (on) : | 0.33 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | PLUS 247 | Packaging : | Tube |
Technical/Catalog Information | IXFX25N90 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25° C | 25A |
Rds On (Max) @ Id, Vgs | 330 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 10800pF @ 25V |
Power - Max | 560W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 240nC @ 10V |
Package / Case | PLUS 247 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFX25N90 IXFX25N90 |