MOSFET 200V 120A
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Features: SpecificationsDescription IXFX 100N25 is a type of HiPerFET power MOSFETs which has six ...
Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: ·International standard packages· Fast recovery diode·Unclamped Inductive Switching (UIS...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 120 A | ||
Resistance Drain-Source RDS (on) : | 0.017 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | PLUS 247 | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
200 200 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM IAR |
TC = 25°C (MOSFET chip capability) TC = 25°C(External lead capability) TC = 25°C, pulse width limited by TJM TC = 25°C |
120 76 480 120 |
A A A A |
EAR EAS |
TC = 25° TC = 25°C |
64 3 |
mJ J |
dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2 |
5 | V/ns |
PD | TC = 25°C | 560 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
Md |
Mounting torque TO-264 |
0.9/6 |
Nm/lb.in. |
Weight | PLUS 247 TO-264 |
6 10 |
g g |
Technical/Catalog Information | IXFX120N20 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 9100pF @ 25V |
Power - Max | 560W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 300nC @ 10V |
Package / Case | PLUS 247 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFX120N20 IXFX120N20 |