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IXFC60N20

MOSFET 60 Amps 200V 0.033 Rds

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SeekIC No. : 00164471 Detail

IXFC60N20: MOSFET 60 Amps 200V 0.033 Rds

IXFC60N20 Data Sheet

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Part Number:
IXFC60N20
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.033 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.033 Ohms
Package / Case : ISOPLUS 220


Features:

·Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
· Low drain to tab capacitance(<35pF)
· Low RDS (on)
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Fast intrinsic Rectifier


Application

· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· AC motor control


Specifications

Symbol
 Test Conditions
Maximum
Ratings
VDSS
VDGR
 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 MΩ
200
200
V
V
VGS
VGSM
 Continuous
Transient
±20
±20
V
V
ID25
IDM
IAR
 TC = 25
TC = 25, pulse width limited by TJM
TC = 25
60
240
60
A
A
A
EAR
EAS
 TC = 25
TC = 25
30
1.0
mJ
J
dv/dt
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150, RG = 2 Ω
5
V/ns
PD
 TC = 25
230
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150


TL
 1.6 mm (0.062 in.) from case for 10 s
300
Weight
  
3
g



Parameters:

Technical/Catalog InformationIXFC60N20
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs33 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 5200pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs155nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFC60N20
IXFC60N20



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