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IXFC16N80P

MOSFET DIODE Id9 BVdass800

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SeekIC No. : 00158213 Detail

IXFC16N80P: MOSFET DIODE Id9 BVdass800

IXFC16N80P Data Sheet

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Part Number:
IXFC16N80P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.65 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.65 Ohms
Package / Case : ISOPLUS 220


Parameters:

Technical/Catalog InformationIXFC16N80P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs650 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds 4600pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs71nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFC16N80P
IXFC16N80P



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