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IRL2910S

MOSFET N-CH 100V 55A D2PAK

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SeekIC No. : 004378309 Detail

IRL2910S: MOSFET N-CH 100V 55A D2PAK

IRL2910S Data Sheet

floor Price/Ceiling Price

US $ 1.47~1.47 / Piece | Get Latest Price
Part Number:
IRL2910S
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~200
  • Unit Price
  • $1.47
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V
55
ID @ TC = 100°C Continuous Drain Current, VGS @10V
39
A
IDM Pulsed Drain Current
190
PD @TC = 25°C Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
520
mJ
IAR Avalanche Current
29
A
EAR Repetitive Avalanche Energy
20
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)



Description

Fifth Generation HEXFETs from International Rectifier IRL2910S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2910S design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL2910S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL2910S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL2910S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL2910S) is available for lowprofile applications




Parameters:

Technical/Catalog InformationIRL2910S
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs26 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds 3700pF @ 25V
Power - Max200W
PackagingBulk
Gate Charge (Qg) @ Vgs140nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRL2910S
IRL2910S



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