IRL2203NLPBF

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Resistance Drain-Source RDS (on) : 10 mOhms
Package / Case : TO-262
Continuous Drain Current : 116 A


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175   Operating Temperatur
`Fast Switching
`Fully Avalanche Rated
`100% R<sub>G</sub> Tested
`Lead-Free


Specifications

Symbol	Parameter	Max	Units
ID@TC = 25	Continuous Drain Current, VGS@10V	116	A
ID@TC = 100	Continuous Drain Current, VGS@10V	82
IDM	Pulsed Drain Current	400
PD@TA = 25	Power Dissipation	3.8	W
PD@TC = 25	Power Dissipation	180	W
	Linear Derating Factor	1.2	W/
VGS	Gate-to-Source Voltage	±16	V
IAR	Avalanche Current	60	A
EAR	Repetitive Avalanche Energy	18	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ	Operating Junction and Storage Temperature Range	-55 to + 175
TSTG	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Description

Advanced HEXFET ^® Power MOSFETs from International Rectifier IRL2203NLPbF utilize advanced processing techniques to achieve extr emely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device d esign that HEXFET power MOSFETs IRL2203NLPbF are well known for, provides the designer with an extremely efficient and reliable de
vice for use in a wide variety of applications.

The D² Pak IRL2203NLPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL2203NLPbF provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D² Pak IRL2203NLPbF is suitable f or high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical s urface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.