MOSFET N-CH 30V 116A TO-262
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 116A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 60A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 3V @ 250µA | Gate Charge (Qg) @ Vgs: | 60nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 3290pF @ 25V | ||
Power - Max: | 3.8W | Mounting Type: | Through Hole | ||
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA | Supplier Device Package: | TO-262 |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 116 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 82 | A |
IDM | Pulsed Drain Current | 400 | A |
PD @TC = 25°C | Power Dissipation | 3.8 | W |
Linear Derating Factor | 180 | W/°C | |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 60 | mJ |
IAR | Avalanche Current | 18 | A |
EAR | Repetitive Avalanche Energy | 22 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ,TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | °C |
Advanced HEXFET® Power MOSFETs from International Rectifier IRL2203NL utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs IRL2203NL are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRL2203NL is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL2203NL provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRL2203NL is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.