IRL2203NL

MOSFET N-CH 30V 116A TO-262

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SeekIC No. : 003433671 Detail

IRL2203NL: MOSFET N-CH 30V 116A TO-262

floor Price/Ceiling Price

Part Number:
IRL2203NL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 116A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 60nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3290pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 60nC @ 4.5V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Power - Max: 3.8W
Supplier Device Package: TO-262
Current - Continuous Drain (Id) @ 25° C: 116A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds: 3290pF @ 25V


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 116 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 82 A
IDM Pulsed Drain Current 400 A
PD @TC = 25°C Power Dissipation 3.8 W
  Linear Derating Factor 180 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 60 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 22 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRL2203NL utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs IRL2203NL are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL2203NL is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL2203NL provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRL2203NL is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.




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