Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Drain-Source Breakdown Voltage
: 30 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Continuous Drain Current
: 100 A
Gate-Source Breakdown Voltage
: 16 V
Resistance Drain-Source RDS (on)
: 10 mOhms
Features: · Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-FreeSpecifications
| Parameter |
Symbol |
Rating |
Unit |
| Continuous Drain Current, VGS @ -10V,Tc = 25 |
ID |
116 |
A |
| Continuous Drain Current, VGS @ -10V,Tc = 100 |
ID |
82 |
A |
| Pulsed Drain Current*1 |
IDM |
400 |
A |
| Power Dissipation Tc = 25 |
PD |
180 |
W |
| Linear Derating Factor |
|
1.2 |
/W |
| Gate-to-Source Voltage |
VGS |
±16 |
V |
| Single Pulse Avalanche Energy*4 |
EAS |
60 |
mJ |
| Repetitive Avalanche Energy |
EAR |
18 |
mJ |
| Peak Diode Recovery dv/dt *2 |
dv/dt |
5.0 |
V/ns |
| Operating Junction and Storage Temperature Range |
TJ,TSTG |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
| Mounting torque, 6-32 or M3 srew |
10 lbf•in (1.1N•m) |
|
DescriptionAdvanced HEXFET® Power MOSFETs from International Rectifier IRL2203NPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2203NPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package of IRL2203NPbF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parameters: | Technical/Catalog Information | IRL2203NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 116A |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 3290pF @ 25V |
| Power - Max | 180W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 4.5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL2203NPBF
IRL2203NPBF
|
IRL2203NPBF Data Sheet
