IRL2203N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 60nC @ 4.5V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Power - Max: 180W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 116A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds: 3290pF @ 25V


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	116	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	82	A
IDM	Pulsed Drain Current	400	A
PD @TC = 25°C	Power Dissipation	180	W
	Linear Derating Factor	1.2	W/°C
VGS	Gate-to-Source Voltage	±16	V
EAS	Single Pulse Avalanche Energy	60	mJ
IAR	Avalanche Current	18	A
EAR	Repetitive Avalanche Energy	22	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)	°C

Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRL2203N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2203N design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of IRL2203N is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.