MOSFET N-CH 100V 55A TO-262
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Parameter |
Maximum |
Units | |
ID @ TC=25 |
Continuous Drain Current,VGS @-10V |
55 |
A |
ID @ TC=100 |
Continuous Drain Current,VGS @-10V |
39 | |
IDM |
Pulsed Drain Current |
190 | |
PD@ TA= 25 |
Power Dissipation |
3.8 |
W |
PD@ TC= 25 |
Power Dissipation |
200 | |
Linear Derating Factor |
1.3 |
W/ | |
VGS |
Gate-to-Source Voltage |
±16 |
V |
EAS |
Single Pulse Avalanche Energy |
520 |
mJ |
IAR |
Avalanche Current |
29 |
A |
EAR |
Repetitive Avalanche Energy |
20 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/nS |
Tj,TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Parameter |
Typ |
Max. |
Units | |
RJC RJA |
Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** |
- - |
0.75 40 |
/W |
Fifth Generation HEXFETs from International Rectifier IRL2910LPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2910LPbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRL2910LPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. The device provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRL2910LPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRL2910LPbF) is available for low-profile applications.
Technical/Catalog Information | IRL2910LPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 55A |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 29A, 10V |
Input Capacitance (Ciss) @ Vds | 3700pF @ 25V |
Power - Max | 200W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 140nC @ 5V |
Package / Case | TO-262-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRL2910LPBF IRL2910LPBF |