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IRL2910LPbF

MOSFET N-CH 100V 55A TO-262

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SeekIC No. : 004378308 Detail

IRL2910LPbF: MOSFET N-CH 100V 55A TO-262

IRL2910LPbF Data Sheet

floor Price/Ceiling Price

US $ .68~1.19 / Piece | Get Latest Price
Part Number:
IRL2910LPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~10000
  • Unit Price
  • $1.19
  • $.91
  • $.86
  • $.81
  • $.77
  • $.74
  • $.68
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

·Logic-Level Gate Drive
·Surface Mount
·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·Fast Switching
·Fully Avalanche Rated
·Lead-Free


Specifications

Parameter
Maximum
Units
ID @ TC=25
 Continuous Drain Current,VGS @-10V
55
A
ID @ TC=100
 Continuous Drain Current,VGS @-10V
39
IDM
 Pulsed Drain Current
190
PD@ TA= 25
 Power Dissipation
3.8
W
PD@ TC= 25
 Power Dissipation
200
 Linear Derating Factor
1.3
W/
VGS
 Gate-to-Source Voltage
±16
V
EAS
 Single Pulse Avalanche Energy
520
mJ
IAR
 Avalanche Current
29
A
EAR
 Repetitive Avalanche Energy
20
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.0
V/nS
Tj,TSTG
 Operating Junction and Storage Temperature Range
-55 to 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
 
Parameter
Typ
Max.
Units
RJC
RJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
-
-
0.75
40
/W



Description

Fifth Generation HEXFETs from International Rectifier IRL2910LPbF utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device IRL2910LPbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL2910LPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. The device provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRL2910LPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRL2910LPbF) is available for low-profile applications.




Parameters:

Technical/Catalog InformationIRL2910LPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs26 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds 3700pF @ 25V
Power - Max200W
PackagingBulk
Gate Charge (Qg) @ Vgs140nC @ 5V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL2910LPBF
IRL2910LPBF



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