IRL2703S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 15nC @ 4.5V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 24A
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 45W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds: 450pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @10V…	24
ID @ TC = 100°C	Continuous Drain Current, VGS @10V…	17	A
IDM	Pulsed Drain Current	86
PD @TC = 25°C	Power Dissipation	45
	Linear Derating Factor	0.30	W/°C
VGS	Gate-to-Source Voltage	± 16	V
EAS	Single Pulse Avalanche Energy	77	mJ
IAR	Avalanche Current	14	A
EAR	Repetitive Avalanche Energy	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt	3.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Description

Fifth Generation HEXFETs from International Rectifier IRL2703S utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2703S design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D2PAK IRL2703S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL2703S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2PAK IRL2703S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.