IRL2703S

MOSFET N-CH 30V 24A D2PAK

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SeekIC No. : 003432307 Detail

IRL2703S: MOSFET N-CH 30V 24A D2PAK

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US $ .58~.58 / Piece | Get Latest Price
Part Number:
IRL2703S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~400
  • Unit Price
  • $.58
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 24A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 15nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 450pF @ 25V
Power - Max: 45W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 15nC @ 4.5V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 24A
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 45W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds: 450pF @ 25V


Specifications

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V…
24
ID @ TC = 100°C Continuous Drain Current, VGS @10V…
17
A
IDM Pulsed Drain Current
86
PD @TC = 25°C Power Dissipation
45
  Linear Derating Factor
0.30
W/°C
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
77
mJ
IAR Avalanche Current
14
A
EAR Repetitive Avalanche Energy
4.5
mJ
dv/dt Peak Diode Recovery dv/dt
3.5
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case)



Description

Fifth Generation HEXFETs from International Rectifier IRL2703S utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2703S design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D2PAK IRL2703S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL2703S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2PAK IRL2703S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.




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