IRL2505S

MOSFET N-CH 55V 104A D2PAK

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SeekIC No. : 003432283 Detail

IRL2505S: MOSFET N-CH 55V 104A D2PAK

floor Price/Ceiling Price

Part Number:
IRL2505S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 104A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 130nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5000pF @ 25V
Power - Max: 3.8W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Input Capacitance (Ciss) @ Vds: 5000pF @ 25V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 3.8W
Current - Continuous Drain (Id) @ 25° C: 104A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V
Gate Charge (Qg) @ Vgs: 130nC @ 5V


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74
IDM Pulsed Drain Current 360
PD @TC = 25°C Power Dissipation 3.8 W
PD @TC = 25°C  Power Dissipation   200  W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 54 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
TSTG Storage Temperature Range
-55 to + 150 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Fifth Generation HEXFETs from International Rectifier IRL2505S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2505S design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL2505S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL2505S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL2505S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL2505S) is available for lowprofile applications.




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