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IRL2310

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 5.0V 40 A ID @ TC = 100°C Continuous Drain Current, V GS @ 5.0V 29 A IDM Pulsed Drain Current 160 A PD @TC = 25°C Power Dissipation 170 W ...

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IRL2310: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 5.0V 40 A ID @ TC = 100°C Continuous Drain Current, V GS @ 5.0V 29 A IDM...

IRL2310 Data Sheet

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Part Number:
IRL2310
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, V GS @ 5.0V 40 A
ID @ TC = 100°C Continuous Drain Current, V GS @ 5.0V 29 A
IDM Pulsed Drain Current 160 A
PD @TC = 25°C Power Dissipation 170 W
  Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 24 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  



Description

Fourth Generation HEXFETs from International Rectifier IRL2310 utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2310 design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of application.

The TO-220 package of IRL2310 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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