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IRL2203S

Features: · Logic-Level Gate Drive· Surface Mount· Advanced Process Technology· Dynamic dv/dt Rating· 175°C Operating Temperature· Fast Switching· Fully Avalanche RatedSpecificationsID @ TC = 25°C Continuous Drain Current, VGS @ 10V ................100 AID @ TC = 100°C Continuous Drain Current, VG...

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IRL2203S: Features: · Logic-Level Gate Drive· Surface Mount· Advanced Process Technology· Dynamic dv/dt Rating· 175°C Operating Temperature· Fast Switching· Fully Avalanche RatedSpecificationsID @ TC = 25°C C...

IRL2203S Data Sheet

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Part Number:
IRL2203S
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Upload time: 2024/12/25

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Product Details

Description



Features:

· Logic-Level Gate Drive
· Surface Mount
· Advanced Process Technology
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated


Specifications

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ................100 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ................71 A
IDM Pulsed Drain Current  ............................................................400 A
PD @TA = 25°C Power Dissipation ...............................................3.8 W
PD @TC = 25°C Power Dissipation ..............................................130 W
Linear Derating Factor .........................................................0.83 W/°C
VGS Gate-to-Source Voltage .......................................................± 20 V
EAS Single Pulse Avalanche Energy ...........................................390 mJ
IAR Avalanche Current ..................................................................60 A
EAR Repetitive Avalanche Energy ...............................................13 mJ
dv/dt Peak Diode Recovery dv/dt  ...........................................1.2 V/ns
TJ Operating Junction and ...........................................-55 to + 175 °C
TSTG Storage Temperature Range ...............................-55 to + 175 °C
Soldering Temperature, for 10 seconds .....300 (1.6mm from case ) °C


Description

Fifth Generation HEXFETs from International Rectifier IRL2203S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRL2203S are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL2203S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL2203S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL2203S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.




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