IRL2203NS

MOSFET N-CH 30V 116A D2PAK

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SeekIC No. : 003433672 Detail

IRL2203NS: MOSFET N-CH 30V 116A D2PAK

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Part Number:
IRL2203NS
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 116A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 60nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3290pF @ 25V
Power - Max: 3.8W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 60nC @ 4.5V
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Power - Max: 3.8W
Current - Continuous Drain (Id) @ 25° C: 116A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds: 3290pF @ 25V


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 116 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 82 A
IDM Pulsed Drain Current 400 A
PD @TC = 25°C Power Dissipation 3.8 W
  Linear Derating Factor 180 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 60 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 22 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRL2203NS utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2203NS design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL2203NS is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL2203NS provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRL2203NS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.




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