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IRHG9110

Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current -0.75 A I...

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SeekIC No. : 004377985 Detail

IRHG9110: Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Light WeightSpecific...

IRHG9110 Data Sheet

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Part Number:
IRHG9110
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current -0.75 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current -0.5
IDM Pulsed Drain Current -3.0
PD @ TC = 25 Max. Power Dissipation 1.4 W
  Linear Derating Factor 0.011 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 75 mJ
IAR Avalanche Current -0.75 A
EAR Repetitive Avalanche Energy 0.14 mJ
dv/dt Peak Diode Recovery dv/dt 2.4 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
  Weight 1.3 (Typical) g



Description

International Rectifier's RAD-HardTM HEXFET® MOSFET Technology IRHG9110 provides high performance power MOSFETs for space applications. This technology IRHG9110 has over a decade of proven performance and reliability in satellite applications. These devices IRHG9110 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHG9110 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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