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IRHG567110

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter N-Channel P-Channel Units ...

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IRHG567110: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...

IRHG567110 Data Sheet

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Part Number:
IRHG567110
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

 
Parameter
N-Channel
P-Channel
Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
1.6
-0.96
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
1.0
-0.6
IDM
 Pulsed Drain Current
6.4
-3.84
PD @ TC = 25°C
 Max. Power Dissipation
1.4
1.4
W
Linear Derating Factor
0.011
0.011
W/
VGS
 Gate-to-Source Voltage
±20
±20
V
EAS
 Single Pulse Avalanche Energy
130
200
mJ
IAR
 Avalanche Current
1.6
-0.96
A
EAR
 Repetitive Avalanche Energy
0.14
0.14
mJ
dv/dt
 Peak Diode Recovery dv/dt
6.5
7.1
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to +150
Storage Temperature Range
300 (0.063 in.(1.6 mm from case for 10s))
Weight
1.3 (Typical)
g



Description

International Rectifier's RAD-HardTM HEXFET® MOSFET Technology IRHG567110 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRHG567110 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHG567110 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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