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IRHG597110

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Curre...

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SeekIC No. : 004377982 Detail

IRHG597110: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package·Light Weight...

IRHG597110 Data Sheet

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Part Number:
IRHG597110
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

 
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
-0.96
A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
-0.6
IDM Pulsed Drain Current
-3.84
PD @ TC = 25°C Max. Power Dissipation
1.4
W
  Linear Derating Factor
0.011
W/
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
200
mJ
IAR Avalanche Current
-0.96
A
EAR Repetitive Avalanche Energy
0.14
mJ
dv/dt Peak Diode Recovery dv/dt
7.1
V/ns
TJ
TSTG

Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature
300 (0.63 in./1.6mm from case for 10s)
  Weight
1.3 (Typical)
g



Description

International Rectifier's RAD-HardTM HEXFET® MOSFET Technology IRHG597110 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications.


These devices IRHG597110 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHG597110 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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