Position: Home  > All Categories> Integrated Circuits (ICs) > IPB80N08S2L-07

IPB80N08S2L-07

MOSFET OptiMOS PWR TRANST 75V 80A

product image

IPB80N08S2L-07 Picture
See larger image
SeekIC No. : 00148616 Detail

IPB80N08S2L-07: MOSFET OptiMOS PWR TRANST 75V 80A

IPB80N08S2L-07 Data Sheet

floor Price/Ceiling Price

US $ .9~1.97 / Piece | Get Latest Price
Part Number:
IPB80N08S2L-07
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.97
  • $1.6
  • $1.23
  • $.9
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/31

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 7.1 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 80 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 7.1 m Ohms


Features:

• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
I D
T C=25 , VGS=10 V
80
A
T C=100 ,
VGS=10 V2)
80
Pulsed drain current2)
I D,pulse
T C=25
320
Avalanche energy, single pulse2)
EAS
I D=80A
810
mJ
Gate source voltage4)
VGS
±20
V
Power dissipation
Ptot
T C=25
300
W
Operating and storage temperature
T j, T stg
-55 ... +175



Parameters:

Technical/Catalog InformationIPB80N08S2L-07
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs6.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 5400pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs233nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N08S2L 07
IPB80N08S2L07



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Line Protection, Backups
BX0023
A20B-1008-0550
RF and RFID
X3C26P1-30S
1P620S
View more