Position: Home  > All Categories> Integrated Circuits (ICs) > IPB80N04S2-04

IPB80N04S2-04

MOSFET N-CH 40V 80A

product image

IPB80N04S2-04 Picture
See larger image
SeekIC No. : 00156550 Detail

IPB80N04S2-04: MOSFET N-CH 40V 80A

IPB80N04S2-04 Data Sheet

floor Price/Ceiling Price

US $ .65~.88 / Piece | Get Latest Price
Part Number:
IPB80N04S2-04
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.88
  • $.73
  • $.68
  • $.65
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/31

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 3.4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 80 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 3.4 m Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25,VGS=10 V
80
A
80
A
Pulsed drain current
ID,pulse
TC=25
320
A
Avalanche energy, single pulse2
EAS
ID=80A
660
mJ
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
TC=25
300
W
Operating and storage temperature
Tj,Tstg
-55 .. +175
IEC climatic category; DIN IEC 68-1
55/175/56



Parameters:

Technical/Catalog InformationIPB80N04S2-04
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.4 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 5300pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPB80N04S2 04
IPB80N04S204



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Tools
TCP202
G084SN05 V.3
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Kits
IT243
UVSC-110-4E1
View more