IPB80N03S4L-03, US $ .4-.73 , Infineon Technologies, IPB80N03S4L-03 DataSheet download, circuit diagram from SeekIC.com

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IPB80N03S4L-03: MOSFET OPTIMOS-T2 POWER-TRANS

IPB80N03S4L-03 Data Sheet

US $ .4~.73 / Piece | Get Latest Price

Part Number:: IPB80N03S4L-03
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$.73
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Upload time: 2024/12/21

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What is this?

IPB80CN10N G evaluate
Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)R...
IPB80N03S4L-02 evaluate
US $.55 - 1 / Piece

MOSFET OPTIMOS-T2 PWR-TRANS 30V 80A 2.4mOhms
IPB80N04S2-04 evaluate
US $.65 - .88 / Piece

MOSFET N-CH 40V 80A

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 16 V	Continuous Drain Current :	80 A
Resistance Drain-Source RDS (on) :	3.3 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 80 A
Package / Case : TO-263
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 3.3 m Ohms

Parameters:

Technical/Catalog Information	IPB80N03S4L-03
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	5100pF @ 25V
Power - Max	94W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPB80N03S4L 03 IPB80N03S4L03

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IPB80N03S4L-03

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