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IPB80CN10N G

Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 °C operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-fr...

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IPB80CN10N G: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 °C operating temperature• Pb-free lead plating; ...

IPB80CN10N G Data Sheet

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Part Number:
IPB80CN10N G
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 13 A
TC=100 °C 9

Pulsed drain current2)

 ID,pulse TC=25 °C 52
Avalanche energy, single pulse EAS ID =13 A, RGS=25 17 mJ
Reverse diode dv /dt dv/dt ID =13 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 °C		 6 kV/s
Gate source voltage3) VGS   ±20 V
Power dissipation Ptot TC=25 °C 31 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V


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