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IC42S81600

Features: • Single 3.3V (± 0.3V) power supply• High speed clock cycle time -6: 166MHz<3-3-3>,-7H: 133MHz<2-2-2>, -7: 133MHz<3-3-3>, -8:100MHz<2-2-2>• Fully synchronous operation referenced to clock rising edge• Possible to assert random column access...

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SeekIC No. : 004370392 Detail

IC42S81600: Features: • Single 3.3V (± 0.3V) power supply• High speed clock cycle time -6: 166MHz<3-3-3>,-7H: 133MHz<2-2-2>, -7: 133MHz<3-3-3>, -8:100MHz<2-2-2>• Fully ...

IC42S81600 Data Sheet

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Part Number:
IC42S81600
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.3V (± 0.3V) power supply
• High speed clock cycle time -6: 166MHz<3-3-3>,-7H: 133MHz<2-2-2>, -7: 133MHz<3-3-3>, -8:100MHz<2-2-2>
• Fully synchronous operation referenced to clock rising edge
• Possible to assert random column access in every cycle
• Quad internal banks contorlled by BA0 & BA1 (Bank Select)
• Byte control by LDQM and UDQM for IC42S16800
• Programmable Wrap sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable CAS latency (2 and 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• X8, X16 organization
• LVTTL compatible inputs and outputs
• 4,096 refresh cycles / 64ms
• Burst termination by Burst stop and Precharge command
• Package 400mil 54-pin TSOP-2


Pinout

Connection Diagram


Specifications

Symbol
Parameters
Rating
Unit
VDD
 Supply Voltage (with respect to VSS)
0.5 to +4.6
V
VDDQ
 Supply Voltage for Output (with respect to VSSQ)
0.5 to +4.6
V
VI
 Input Voltage (with respect to VSS)
0.5 to VDD+0.5
V
VO
 Output Voltage (with respect to VSSQ)
1.0 to VDDQ+0.5
V
IO
 Short circuit output current
50
mA
PD
 Power Dissipation (TA = 25)
1
W
TOPT
 Operating Temperature Commercial
Industrial
0 to +70
-40 to +85
TSTG
 Storage Temperature
65 to +150

Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.




Description

The IC42S81600 and IC42S16800 are high-speed 134,217,728-bit synchronous dynamic randomaccess memories, organized as 4,194,304 x 8 x 4 and 2,097,152 x 16 x 4 (word x bit x bank), respectively.

The synchronous DRAMs of the IC42S81600 achieved high-speed data transfer using the pipeline architecture. All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOP-2.




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