Features: • Clock frequency: 200, 166, 143 MHz• Fully synchronous; all signals referenced to apositive clock edge• Two banks can be operated simultaneously andindependently• Dual internal bank controlled by A11 (bank select)• Single 3.3V power supply• LVTTL inte...
IC42S16100: Features: • Clock frequency: 200, 166, 143 MHz• Fully synchronous; all signals referenced to apositive clock edge• Two banks can be operated simultaneously andindependently• ...
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Features: • Drive Strength for low capacitive bus loading• Clock frequency: 200, 166, ...
Features: • Driver Strength for High capacitive bus loading• Clock frequency: 200, 166...
DescriptionThe IC42S16160C-6TL is designed as one kind of 4M x 16 bits x 4 banks (256-Mbit) synchr...
Symbol | Parameters | Rating | Unit |
VCC MAX | Maximum Supply Voltage | 1.0 to +4.6 | V |
VCCQ MAX | Maximum Supply Voltage for Output Buffer | 1.0 to +4.6 | V |
VIN | Input Voltage | 1.0 to +4.6 | V |
VOUT | Output Voltage | 1.0 to +4.6 | V |
PD MAX | Allowable Power Dissipation | 1 | W |
ICS | Output Shorted Current | 50 | mA |
TOPR | Operating Temperature | 0 to +70 | |
TSTG | Storage Temperature | 55 to +150 |
ICSI's 16Mb Synchronous DRAM IC42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.