Features: · Concurrent auto precharge· Clock rate:166/143/125 MHz· Fully synchronous operation· Internal pipelined architecture· Four internal banks (1M x 32bit x 4bank)· Programmable Mode -CAS#Latency:2 or 3 -Burst Length:1,2,4,8,or full page -Burst Type:interleaved or linear burst -Burst-Read-Si...
IC42S32400: Features: · Concurrent auto precharge· Clock rate:166/143/125 MHz· Fully synchronous operation· Internal pipelined architecture· Four internal banks (1M x 32bit x 4bank)· Programmable Mode -CAS#Late...
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Features: • Clock frequency: 200, 166, 143 MHz• Fully synchronous; all signals referen...
Features: • Drive Strength for low capacitive bus loading• Clock frequency: 200, 166, ...
Features: • Driver Strength for High capacitive bus loading• Clock frequency: 200, 166...
Symbol | Parameters | Rating | Unit |
VDD | Supply Voltage (with respect to VSS) | 0.5 to +4.6 | V |
VDDQ | Supply Voltage for Output (with respect to VSSQ) | 0.5 to +4.6 | V |
VI | Input Voltage (with respect to VSS) | 0.5 to VDD+0.5 | V |
VO | Output Voltage (with respect to VSSQ) | 1.0 to VDDQ+0.5 | V |
IO | Short circuit output current | 50 | mA |
PD | Power Dissipation (TA = 25 ) | 1 | W |
TOPT | Operating Temperature | 0 to +70 | |
TSTG | Storage Temperature | 65 to +150 |
The ICSI IC42S32400 and IC42S32400L is a high-speed CMOS configured as a quad 1M x 32 DRAM with a
synchronous interface (all signals are registered on the positive edge of the clock signal,CLK).
Each of the 1M x 32 bit banks is organized as 4096 rows by 256 columns by 32 bits.Read and write accesses start at a selected locations in a programmed sequence. Accesses begin with the registration of a BankActivecommandwhichis then followed by a Read or Writecommand
The ICSI IC42S32400 and IC42S32400L provides for programmable Read or Write burst lengths of 1,2,4,8,or fullpage, with a burst termination operation. An auto precharge function may be enable to provide a self-timedrow precharge that is initiated at the end of the burst sequence.The refresh functions,either Auto or Self Refresh are easy to use.By having a programmable mode register,the system can choose the most suitable modes to maximize itsperformance.
These devices are well suited for applications requiring high memory bandwidth.