Features: · Concurrent auto precharge· Clock rate:166/143/125 MHz· Fully synchronous operation· Internal pipelined architecture· Four internal banks (512K x 32bit x 4bank)· Programmable Mode -CAS#Latency:2 or 3 -Burst Length:1,2,4,8,or full page -Burst Type:interleaved or linear burst -Burst-Read-...
IC42S32200: Features: · Concurrent auto precharge· Clock rate:166/143/125 MHz· Fully synchronous operation· Internal pipelined architecture· Four internal banks (512K x 32bit x 4bank)· Programmable Mode -CAS#La...
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Features: • Clock frequency: 200, 166, 143 MHz• Fully synchronous; all signals referen...
Features: • Drive Strength for low capacitive bus loading• Clock frequency: 200, 166, ...
Features: • Driver Strength for High capacitive bus loading• Clock frequency: 200, 166...
The IC42S32200 is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK).
Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Read and write accesses start at a selected locations in a programmed sequence. Accesses begin with the registration of a BankActive command which is then followed by a Read or Write command
The IC42S32200 provides for programmable Read or Write burst lengths of 1,2,4,8,or full page, with a burst termination operation. An auto precharge function may be enable to provide a self-timed row precharge that is initiated at the end of the burst sequence.The refresh functions,either Auto or Self Refresh are easy to use.
By having a programmable mode register,the system can choose the most suitable modes to maximize its performance.
The IC42S32200 are well suited for applications requiring high memory bandwidth.