IC42S16800D-6TL

The IC42S16800D-6TL is designed as one kind of 16 Meg x 8, 8 Meg x16 128-Mbit synchronous DRAM device that achieves high-speed data transfer using pipeline architecture. And all inputs and outputs signals of this device refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows.

Features of the IC42S16800D-6TL are:(1)Clock frequency: 166, 143, 133 MHz; (2)Fully synchronous; all signals referenced to a positive clock edge; (3)Internal bank for hiding row access/precharge; (4)Power supply; (5)LVTTL interface; (6)Programmable burst length; (7)(1, 2, 4, 8, full page); (8)Programmable burst sequence: Sequential/Interleave; (9)Auto Refresh (CBR); (10)Self Refresh with programmable refresh periods; (11)4096 refresh cycles every 64 ms; (12)Random column address every clock cycle; (13)Programmable CAS latency (2, 3 clocks); (14)burst read/write and burst read/single write operations capability; (15)burst termination by burst stop and precharge command; (16)industrial temperature availability.

The absolute maximum ratings of the IC42S16800D-6TL can be summarized as:(1)Maximum Supply Voltage:0.5 to +4.6 V;(2)Maximum Supply Voltage for Output Buffer:0.5 to +4.6 V;(3)Input Voltage:0.5 to VDD+0.5 V;(4)Output Voltage:1.0 to VDDQ+0.5 V;(5)Allowable Power Dissipation: 1 W;(6)Output Shorted Current: 50 mA;(7)Storage Temperature:55 to +150 °C.

The electrical characteristics of this device can be summarized as:(1)Input Leakage Current: -5 to 5 A;(2)Output Leakage Current: -5 to 5 A;(3)Output High Voltage Level: 2.4 V;(4)Output Low Voltage Level: 0.4 V. If you want to know more information about IC42S16800D-6TL, please download the datasheet in www.seekic.com or www.chinaicmart.com .