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IC42S16400

Features: • Single 3.3V (± 0.3V) power supply• High speed clock cycle time -6: 166MHz, -7: 133MHz<3-3-3>• Fully synchronous operation referenced to clock rising edge• Possible to assert random column access in every cycle• Quad internal banks contorlled by A12 &...

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SeekIC No. : 004370379 Detail

IC42S16400: Features: • Single 3.3V (± 0.3V) power supply• High speed clock cycle time -6: 166MHz, -7: 133MHz<3-3-3>• Fully synchronous operation referenced to clock rising edge• P...

IC42S16400 Data Sheet

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Part Number:
IC42S16400
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.3V (± 0.3V) power supply
• High speed clock cycle time -6: 166MHz, -7: 133MHz<3-3-3>
• Fully synchronous operation referenced to clock rising edge
• Possible to assert random column access in every cycle
• Quad internal banks contorlled by A12 & A13 (Bank Select)
• Byte control by LDQM and UDQM for IC42S16400
• Programmable Wrap sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable CAS latency (2 and 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• LVTTL compatible inputs and outputs
• 4,096 refresh cycles / 64ms
• Burst termination by Burst stop and Precharge command
• Package 400mil 54-pin TSOP-2 and 60ball(64M) VF-BGA
• Pb(lead)-free package is available


Pinout

Connection Diagram


Specifications

Symbol
 Parameters
Rating
Unit
VDD
 Supply Voltage (with respect to VSS)
0.5 to +4.6
V
VDDQ
 Supply Voltage for Output (with respect to VSSQ)
0.5 to +4.6
V
VI
 Input Voltage (with respect to VSS)
0.5 to VDD+0.5
V
VO
 Output Voltage (with respect to VSSQ)
1.0 to VDDQ+0.5
V
IO
 Short circuit output current
50
mA
PD
 Power Dissipation (TA = 25 °C)
1
W
TOPT
 Operating Temperature
0 to +70
°C
TSTG
 Storage Temperature
65 to +150
°C
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.


Description

The IC42S16400 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 1,048,576 x 16 x 4 (word x bit x bank), respectively.

The synchronous DRAMs of the IC42S16400 achieved high-speed data transfer using the pipeline architecture and clock frequency up to 166MHz for -6. All input and outputs are
synchronized with the positive edge of the clock.The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin
TSOP-2 and 60ball(64M) VF-BGA.




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