HPMX-3002

Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Tc = 25 °C (Tc is defined to be the temperature at the ends of pin 7 where it contacts the circuit board).
3. Derate at 15.2 mW/°C for TC > 58°C.

Hewlett-Packard's HPMX-3002 is a silicon microwave monolithic integrated circuit driver amplifier housed in a S0-8 surface mount plastic package. It operates over the 150 - 960 MHz frequency range, and at 900 MHz it produces +23 dBm of saturated output power, has 30 dB of small signal gain and a 50 dB power control range. The amplifier has a wellmatched input, and an open collector output which provides good linearity and efficiency and is easy to externally match to 50 W for optimal power output.

This device HPMX-3002 is well suited as a driver amplifier for European GSM (Global System for Mobile communications) portable and mobile telephone systems, or as the output stage for other low cost applications such as 900 MHz ISM band spread-spectrum.

The HPMX-3002 is fabricated with Hewlett-Packard's 15 GHz ft ISOSAT-II process, which combines stepper lithography, ion implantation, self-alignment techniques, and gold metallization to produce RFICs with superior performance, uniformity and reliability .