Position: Home  > All Categories> Integrated Circuits (ICs) > HN2E01F

HN2E01F

Features: Q1Low Forward Voltage Drop : VF(3)=0.98V(typ.)Fast Reverse Recovery Time : trr=1.6ns(typ.)Low Total Capacitance : CT=0.5pF(typ.)Q2High DC Current Gain : hFE=600~3600High Voltage : VCEO=50VHigh Collector Current : IC=150mA(max.)Q1 (Diode) : 1SS352 EquivalentQ2 (Transistor) : 2SC4666 Equiv...

product image

HN2E01F Picture
See larger image
SeekIC No. : 004365009 Detail

HN2E01F: Features: Q1Low Forward Voltage Drop : VF(3)=0.98V(typ.)Fast Reverse Recovery Time : trr=1.6ns(typ.)Low Total Capacitance : CT=0.5pF(typ.)Q2High DC Current Gain : hFE=600~3600High Voltage : VCEO=50V...

HN2E01F Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
HN2E01F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/6/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Q1
Low Forward Voltage Drop : VF(3)=0.98V(typ.)
Fast Reverse Recovery Time : trr=1.6ns(typ.)
Low Total Capacitance : CT=0.5pF(typ.)
Q2
High DC Current Gain : hFE=600~3600
High Voltage : VCEO=50V
High Collector Current : IC=150mA(max.)
Q1 (Diode) : 1SS352 Equivalent
Q2 (Transistor) : 2SC4666 Equivalent


Specifications

Q1 (Diode)

Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
1
A
Q2 (Transistor)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Characteristic
Symbol
Rating
Unit
Collector power dissipation
PC*
300
mW
Junction temperature
Tj
125
Storage temperature range
Tstg
−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  "Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

* Total rating: 200mW per element should not be exceeded.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Prototyping Products
AVT4168
DE1
Optical Inspection Equipment
AA924
A21K4B
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Optoelectronics
SFH7770
TLP423J
View more