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HN2E04F

Features: Q1High Voltage :VCEO= −120VHigh DC Current Gain : hFE =200~700Good hFE Linearity :hFE(IC= −0.1mA)/ hFE(IC= −2mA) =0.95Q2Low Forward Voltage Drop :VF(3)=0.98V(typ.)Fast Reverse Recovery Time :trr=1.6ns(typ.)Low Total Capacitance :CT=0.5pF(typ.)Q1 (Transistor) : 2SA1587 e...

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SeekIC No. : 004365011 Detail

HN2E04F: Features: Q1High Voltage :VCEO= −120VHigh DC Current Gain : hFE =200~700Good hFE Linearity :hFE(IC= −0.1mA)/ hFE(IC= −2mA) =0.95Q2Low Forward Voltage Drop :VF(3)=0.98V(typ.)Fast Re...

HN2E04F Data Sheet

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Part Number:
HN2E04F
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Product Details

Description



Features:

Q1
High Voltage :VCEO= −120V
High DC Current Gain : hFE =200~700
Good hFE Linearity :hFE(IC= −0.1mA)/ hFE(IC= −2mA) =0.95
Q2
Low Forward Voltage Drop :VF(3)=0.98V(typ.)
Fast Reverse Recovery Time :trr=1.6ns(typ.)
Low Total Capacitance :CT=0.5pF(typ.)
Q1 (Transistor) : 2SA1587 equivalent
Q2 (Transistor) : 1SS352 equivalent


Specifications

Characteristic Symbol Rating Unit
Collector-base voltage VCBO -120 V
Collector-emitter voltage VCEO -120 V
Emitter-base voltage VEBO -5 V
Collector current IC -100 mA
Base current IB -20 mA
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300 mA
Average forward current IO 100 mA
Surge current (10ms) IFSM 1 A
Characteristic Symbol Rating Unit
Collector power dissipation PC* 300 mW
Junction temperature Tj 125
Storage temperature range Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

*Total rating: Power dissipation per element should not exceed 200mW per element.




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