ApplicationQ1Low Forward Voltage Drop :VF(3)=0.98V(typ.)Fast Reverse Recovery Time :trr=1.6ns(typ.)Low Total Capacitance :CT=0.5pF(typ.)Q2High Voltage :VCEO=50VHigh Collector Current :IC=150mA(max.)Good hFE Linearity:hFE(IC=0.1mA)/ hFE(IC=2mA) =0.95Q1 (Diode) : 1SS352 EquivalentQ2 (Transistor) : 2...
HN2E02F: ApplicationQ1Low Forward Voltage Drop :VF(3)=0.98V(typ.)Fast Reverse Recovery Time :trr=1.6ns(typ.)Low Total Capacitance :CT=0.5pF(typ.)Q2High Voltage :VCEO=50VHigh Collector Current :IC=150mA(max.)...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.1 - .14 / Piece
Transistors Bipolar (BJT) Small Signal SBD + PNP (BRT)
Characteristic | Symbol | Rating | Unit |
Maximum (peak) reverse voltage | VRM | 85 | V |
Reverse voltage | VR | 80 | V |
Maximum (peak) forward current | IFM | 300 | mA |
Average forward current | IO | 100 | mA |
Surge current (10ms) | IFSM | 1 | A |
Characteristic | Symbol | Rating | Unit |
Collector-base voltage | VCBO | 60 | V |
Collector-emitter voltage | VCEO | 50 | V |
Emitter-base voltage | VEBO | 5 | V |
Collector current | IC | 150 | mA |
Base current | IB | 30 | mA |
Characteristic | Symbol | Rating | Unit |
Collector power dissipation | PC* | 300 | mW |
Junction temperature | Tj | 125 | |
Storage temperature range | Tstg | −55~125 |