HN2E02F

ApplicationQ1Low Forward Voltage Drop :VF(3)=0.98V(typ.)Fast Reverse Recovery Time :trr=1.6ns(typ.)Low Total Capacitance :CT=0.5pF(typ.)Q2High Voltage :VCEO=50VHigh Collector Current :IC=150mA(max.)Good hFE Linearity:hFE(IC=0.1mA)/ hFE(IC=2mA) =0.95Q1 (Diode) : 1SS352 EquivalentQ2 (Transistor) : 2...

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HN2E02F Picture
SeekIC No. : 004365010 Detail

HN2E02F: ApplicationQ1Low Forward Voltage Drop :VF(3)=0.98V(typ.)Fast Reverse Recovery Time :trr=1.6ns(typ.)Low Total Capacitance :CT=0.5pF(typ.)Q2High Voltage :VCEO=50VHigh Collector Current :IC=150mA(max.)...

floor Price/Ceiling Price

Part Number:
HN2E02F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/6/5

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Product Details

Description



Application

Q1
Low Forward Voltage Drop :VF(3)=0.98V(typ.)
Fast Reverse Recovery Time :trr=1.6ns(typ.)
Low Total Capacitance :CT=0.5pF(typ.)
Q2
High Voltage :VCEO=50V
High Collector Current :IC=150mA(max.)
Good hFE Linearity
:hFE(IC=0.1mA)/ hFE(IC=2mA) =0.95
Q1 (Diode) : 1SS352 Equivalent
Q2 (Transistor) : 2SC4738 Equivalent



Specifications

Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300 mA
Average forward current IO 100 mA
Surge current (10ms) IFSM 1 A
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Characteristic Symbol Rating Unit
Collector power dissipation PC* 300 mW
Junction temperature Tj 125
Storage temperature range Tstg −55~125



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