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HN1C03F

Application`Including two devices in SM6 (Super mini type with 6 leads)`High emitter-base voltage: VEBO = 25V (min)`High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)`Low on resistance: RON = 1 (typ.)(IB = 5mA)PinoutSpecifications Characteristic Symbol Rating Unit ...

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HN1C03F: Application`Including two devices in SM6 (Super mini type with 6 leads)`High emitter-base voltage: VEBO = 25V (min)`High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)`Low on ...

HN1C03F Data Sheet

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Part Number:
HN1C03F
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Product Details

Description



Application

`Including two devices in SM6 (Super mini type with 6 leads)
`High emitter-base voltage: VEBO = 25V (min)
`High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)
`Low on resistance: RON = 1 (typ.)(IB = 5mA)


Pinout

Connection Diagram


Specifications

Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 20 V
Emitter-base voltage VEBO 25 V
Collector Current IC 300 mA
Base current IB 60 mA
Collector power dissipation PC* 300 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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