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HN1C01F

Features: 􀁺 Small package (dual type)􀁺 High voltage and high current : VCEO = 50 V, IC = 150 mA (max)􀁺 High hFE : hFE = 120~400􀁺 Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.)Specifications Characteristics Symbol Rating Unit ...

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HN1C01F: Features: 􀁺 Small package (dual type)􀁺 High voltage and high current : VCEO = 50 V, IC = 150 mA (max)􀁺 High hFE : hFE = 120~400􀁺 Excellent hFE linearity : hFE (IC...

HN1C01F Data Sheet

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Part Number:
HN1C01F
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/12/21

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Product Details

Description



Features:

􀁺 Small package (dual type)
􀁺 High voltage and high current
        : VCEO = 50 V, IC = 150 mA (max)
􀁺 High hFE : hFE = 120~400
􀁺 Excellent hFE linearity
       : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.)


Specifications

Characteristics Symbol Rating Unit
Collector-base voltage
 VCBO

 60
 V
Collector-emitter voltage
 VCEO


 50
 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Collector power dissipation PC * 300 mA
Junction temperature TJ 125 mW
Operating and storage temperature range Tstg -55 to +125


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating




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